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Determination of the optical parameters of a-Si:H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

✍ Scribed by Bakr, Nabeel A. (author);Funde, A. M. (author);Waman, V. S. (author);Kamble, M. M. (author);Hawaldar, R. R. (author);Amalnerkar, D. P. (author);Gosavi, S. W. (author);Jadkar, S. R. (author)


Book ID
107588913
Publisher
Indian Academy of Sciences
Year
2011
Tongue
English
Weight
231 KB
Volume
76
Category
Article
ISSN
0304-4289

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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not