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Controlling growth and field emission property of aligned carbon nanotubes on porous silicon substrates

โœ Scribed by Xu, Dongsheng; Guo, Guolin; Gui, Linlin; Tang, Youqi; Shi, Zujin; Jin, Zhaoxia; Gu, Zhennan; Liu, Weimin; Li, Xiulan; Zhang, Guanghua


Book ID
121408690
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
514 KB
Volume
75
Category
Article
ISSN
0003-6951

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Selective growth and field emission of v
โœ Y. Huh; J.Y. Lee; J.H. Lee; T.J. Lee; S.C. Lyu; C.J. Lee ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 294 KB

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indic