Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

✍ Scribed by Y. Huh; J.Y. Lee; J.H. Lee; T.J. Lee; S.C. Lyu; C.J. Lee

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 294 KB
• Volume: 375
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/s0009-2614(03)00869-8

✦ Synopsis

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 lA at the applied gate voltage of 100 V.