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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

โœ Scribed by Olsen, S.H.; Escobedo-Cousin, E.; Varzgar, J.B.; Agaiby, R.; Seger, J.; Dobrosz, P.; Chattopadhyay, S.; Bull, S.J.; O'Neill, A.G.; Hellstrom, P.-E.; Edholm, J.; Ostling, M.; Lyutovich, K.L.; Oehme, M.; Kasper, E.


Book ID
114618413
Publisher
IEEE
Year
2006
Tongue
English
Weight
447 KB
Volume
53
Category
Article
ISSN
0018-9383

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Characterisation of virtual substrates w
โœ Klara Lyutovich; Jens Werner; Michael Oehme; Erich Kasper; Tatiana Perova ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 276 KB

Characterisation of virtual substrates, intended to yield strain in MOSFET channels, has been performed both in situ during epitaxial growth and ex situ on completed SiGe buffer layers. Ultrathin (60-40 nm) buffer layers with high Ge content of 40% are grown on Si substrates by molecular beam epitax