๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Control of polytype formation by surface energy effects during the growth of SiC monocrystals by the sublimation method

โœ Scribed by R.A. Stein; P. Lanig

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
323 KB
Volume
131
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Influence of surface energy on the growt
Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation
โœ R.A. Stein; P. Lanig; S. Leibenzeder ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 193 KB

Large SiC crystals can be grown by a sublimation process. For electronic application the control of the growth of a definite polytype is important. We have shown that sublimation growth on the Si[0001] side, under given conditions, always crystallizes the 6H polytype regardless of the polytype of th

Investigation of the role of crystal gro
Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 330 KB ๐Ÿ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys