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Control of impurity diffusion in silicon by IR laser excitation

✍ Scribed by K. Shirai; K. Matsukawa; T. Moriwaki; Y. Ikemoto

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
235 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis

We report a first-time attempt of diffusion control of impurities by IR excitation, by using an intensive synchrotron radiation facility, BL43IR of SPring-8. Although the result is discouraging, the plan, experimental setup, irradiation experiment, and the result on the impurity diffusion, are described in detail, in hoping improvement of experiment in the future. It is suggested that the input power employed in the present experiment is not enough to observe the intended results.

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Redistribution of Heavy Metal Impurities
Redistribution of Heavy Metal Impurities in Silicon by Phosphorus Diffusion
✍ D. Knoll; A. Fischer πŸ“‚ Article πŸ“… 1982 πŸ› John Wiley and Sons 🌐 English βš– 401 KB πŸ‘ 1 views

## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.