Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors

✍ Scribed by T. Ghani; J. L. Hoyt; A. M. McCarthy; J. F. Gibbons

• Book ID: 112812598
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 436 KB
• Volume: 24
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02652973