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Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants

✍ Scribed by DJ Robbins; WY Leong; JL Glasper; AJ Pidduck; R Jackson; IRC Post; ZA Shafi; P Ashburn


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
230 KB
Volume
19
Category
Article
ISSN
0167-9317

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