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Control of boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices

✍ Scribed by A. Srivastava; J.T. Boyd

Book ID: 107829670
Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 692 KB
Volume: 23
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(83)91387-2

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The influence of higher moments is also important for the case of direct implantation of wells for CMOS. Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 ke V and 800 ke V. UV exposure, systems and control TED