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Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates

✍ Scribed by J.C. Harmand; J.P. Praseuth; E. Idiart-Alhor; R. Palla; J.L. Pelouard; M. Quillec


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
443 KB
Volume
150
Category
Article
ISSN
0022-0248

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