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Contact potential difference measurements on real semiconductor surfaces by means of a point vibrating electrode

✍ Scribed by J. Sochański

Publisher: John Wiley and Sons
Year: 1962
Tongue: English
Weight: 229 KB
Volume: 2
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.19620021010

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✦ Synopsis

Abstract

Changes of contact potential are observed in inversion layers induced in germanium by applying a reverse bias voltage in the vicinity of a p‐n junction. Comparison is made with changes of surface potential calculated from simultaneous measurements of channel conductance. Agreement is good, showing that, under certain conditions, changes in the potential drop through the oxide layer can be neglected.

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