Resistivity measurement of thin doped semiconductor layers by means of four point-contacts arbitrarily spaced on a circumference of arbitrary radius : Egbert Hesse. Solid-St. Electron. 21, 637 (1978)

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 119 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(78)90418-3