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Contact characterizations of ZrN thin films obtained by reactive sputtering

✍ Scribed by J. Pelleg; A. Bibi; M. Sinder

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
210 KB
Volume
393
Category
Article
ISSN
0921-4526

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✦ Synopsis

The contact properties of ZrN x on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zerobias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

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Thin films of titanium hydride were obtained by reactive cathodic sputtering with a titanium target using different compositions of a mixture of hydrogen and argon as sputtering gas. The layered material is quite different from the bulk material: only a poorly crystallized phase with formula Till,.