Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface
Confined Multiexciton States of GaAs/AlGaAs Quantum Dots Grown on a (411)A GaAs Surface
β Scribed by C. Watatani; K. Edamatsu; T. Itoh; H. Hayashi; S. Shimomura; S. Hiyamizu
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 142 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this work we report the effects of the growth interruption on the optical and microscopic properties of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy on ( 100) and (311)B oriented GaAs substrates. The growth interruption applied after the deposition of the InAs layer stron
The use of Raman scattering in different polarization geometries makes it possible to observe the splitting of transverse optical (TO) phonon modes confined in GaAs/AlAs superlattices grown on faceted GaAs (311)A surfaces. The frequencies of TO modes with atomic displacements in the direction along
The binding energy of a donor impurity in a spherical GaAsΒ±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation