Conductivity threshold and kinetics of the phase transition in Fe2O3-Fe3O4thin films made by chemical vapour deposition
β Scribed by I. A. Serbinov; G. A. Niklasson; C. G. Granqvist
- Publisher
- Springer
- Year
- 1988
- Tongue
- English
- Weight
- 281 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0022-2461
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Iron oxide thin films have been prepared at room temperature by ion beam induced chemical vapour deposition. The films were grown by bombardment of a substrate with O Ο© 2 or O Ο© 2 Ο©Ar Ο© mixtures, while a Fe(CO) 5 volatile precursor was dosed on the surface. In both cases, the films were dense and ha
Epitaxial La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3Γd (LSCF) thin films have been grown successfully on single crystal LaAlO 3 substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5 A for the 550 C deposited films. The films further exhibited electrical conductivities of a
A silicon nitride Γlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Γlms by bu β ered hydroΓuoric acid (BHF) were investigated using Ruth