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Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films

✍ Scribed by Atsushi Ando; Ryu Hasunuma; Tatsuro Maeda; Kunihiro Sakamoto; Kazushi Miki; Yasushiro Nishioka; Tsunenori Sakamoto

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 921 KB
Volume: 162-163
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00223-3

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✦ Synopsis

Ž

. Ž . We have demonstrated the characterizations of the local electrical properties of ultrathin 1-4 nm SiO rSi 001 2 Ž y5 . structures using a conducting atomic force microscopy with a nanometer-scale resolution in a vacuum 1 = 10 Pa . The measurement in a vacuum enables to reduce the influence of adsorbed water on quantitative current measurements, while there is a problem at the measurement in air of 60% humidity. Fitting to the Fowler-Nordheim equation is good at thicker SiO films more than ; 3 nm. We have also demonstrated the results of continuous current-voltage measurements during 2 the breakdown process by charge injection through a conducting probe.

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