𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Concept of floating-dot memory transistors on silicon-on-insulator substrate

✍ Scribed by O. Winkler; F. Merget; M. Heuser; B. Hadam; M. Baus; B. Spangenberg; H. Kurz

Book ID
114155398
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
443 KB
Volume
61-62
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Silicon-on-insulator non-volatile field-
Silicon-on-insulator non-volatile field-effect transistor memory
✍ J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 104 KB

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were