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Concentration and annealing effects on photoluminescence and local structure of Er-implanted silica

✍ Scribed by Matthew Marcus; Dale Jacobson; Arjen Vredenberg; Geraldine Lamble

Book ID
115990730
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
514 KB
Volume
195
Category
Article
ISSN
0022-3093

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## Abstract Ce‐doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 °C in air ambient and a separate sample with the same Ce concentration was an