Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-κ gate dielectrics and TiN gate

✍ Scribed by von Haartman, M.; Malm, B.G.; Mikael Ostling

• Book ID: 114618157
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 348 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.870276