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The Role of Nitrogen on Charge-Trapping-Induced Vth Instability in HfAlON High-κ Gate Dielectric With Metal and Poly-Si Gate Electrodes

✍ Scribed by Xiongfei Yu; Mingbin Yu; Chunxiang Zhu


Book ID
114618836
Publisher
IEEE
Year
2007
Tongue
English
Weight
234 KB
Volume
54
Category
Article
ISSN
0018-9383

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