𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comprehensive modeling of bulk-damage effects in silicon radiation detectors

✍ Scribed by Passeri, D.; Ciampolini, P.; Bilei, G.M.; Moscatelli, F.

Book ID
114554956
Publisher
IEEE
Year
2001
Tongue
English
Weight
97 KB
Volume
48
Category
Article
ISSN
0018-9499

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Radiation damage effects in the NA60 sil
Radiation damage effects in the NA60 silicon pixel detectors
✍ M. Keil; K. Banicz; M. Floris; J.M. Heuser; C. LourenΓ§o; H. Ohnishi; E. Radermac πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 250 KB

The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 200

Numerical simulation of radiation damage
Numerical simulation of radiation damage effects in p-type silicon detectors
✍ M. Petasecca; F. Moscatelli; D. Passeri; G.U. Pignatel; C. Scarpello πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 158 KB

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon,