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Compositional transients in MOCVD grown III–V heterostructures

✍ Scribed by E.J. Thrush; J.E.A. Whiteaway; G. Wale-Evans; D.R. Wight; A.G. Cullis

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 716 KB
Volume: 68
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(84)90443-3

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## Abstract Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cl