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Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPE

โœ Scribed by James S. C. Chang; Kent W. Carey; John E. Turner; Lee A. Hodge


Book ID
112811910
Publisher
Springer US
Year
1990
Tongue
English
Weight
658 KB
Volume
19
Category
Article
ISSN
0361-5235

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GalnAs/InP multilayer structures have been grown by chemical beam epitaxy in windows opened in SiO2 masks deposited on (I)01) InP substrates. The windows were narrow lines of width varying between 20 and 2pro, oriented along the [01 !] direction. The growth conditions, substratc temperature and V/Il