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Compositional aspects of the vapour-phase epitaxial growth of GaInAs layers from Ga-In-As-H-Cl system

✍ Scribed by V N Mani

Book ID
112884634
Publisher
Springer-Verlag
Year
1994
Tongue
English
Weight
387 KB
Volume
17
Category
Article
ISSN
0250-4707

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense