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Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy

✍ Scribed by Stegmann, Heiko; Zschech, Ehrenfried

Book ID: 120756563
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 383 KB
Volume: 83
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1633674

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