Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy

✍ Scribed by P. Poveda; A. Glachant

• Book ID: 116066547
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 863 KB
• Volume: 323
• Category: Article
• ISSN: 0039-6028
• DOI: 10.1016/0039-6028(94)00676-8