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Electron beam-assisted growth of ultrathin silicon oxynitride films on Si(100) at moderate temperatures: in situ determination of composition and gap width

✍ Scribed by P. Poveda; A. Glachant


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
305 KB
Volume
28
Category
Article
ISSN
0167-9317

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