Analyses of composition and chemical shift of silicon oxynitride film using energy-filtering transmission electron microscope based spatially resolved electron energy loss spectroscopy

✍ Scribed by K Kimoto; K Kobayashi; T Aoyama; Y Mitsui

• Book ID: 104369188
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 934 KB
• Volume: 30
• Category: Article
• ISSN: 0968-4328
• DOI: 10.1016/s0968-4328(99)00023-2

✦ Synopsis

Composition and chemical shift analyses of a multilayer (SiO 2 /Si 3 N 4 /SiO x N y /Si) were performed by spatially resolved electron energy loss spectroscopy (EELS) using an energy-filtering transmission electron microscope (EFTEM). Using EFTEM-based spatially resolved EELS (EFTEM-SREELS), many spectra from different positions on the specimen can be obtained simultaneously without scanning the focused electron beam. It has been shown that nitrogen is accumulated at the interface between SiO x N y and Si, and the full-width at half-maximum of the nitrogen accumulation is 1.7 nm. The nitrogen energy loss spectrum at the interface shows a chemical shift of about 0.5 eV in comparison with that of Si 3 N 4 . Based on molecular orbital calculations, the nitrogen at the interface appears to be included in N-Si-O bonds. The EFTEM-SREELS is found to be effective in obtaining precise line profiles of composition and chemical shift.