Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis

✍ Scribed by H. Kitano; S. Abo; M. Mizutani; J. Tsuchimoto; T. Lohner; J. Gyulai; F. Wakaya; M. Takai

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 377 KB
• Volume: 249
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.04.007

✦ Synopsis

Hf x Si y O 1ÀxÀy layers with thicknesses of 2 and 10 nm were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA), in which the yield of MEIS spectra was found to decrease with decreasing energy in contrast to conventional Rutherford backscattering spectrometry (RBS), due to the increase in neutralized particles.

The Hf x Si y O 1ÀxÀy spectra obtained by MEIS were corrected with a ratio of the simulated MEIS yield to measured yield for a virgin Si at each energy. The corrected Hf x Si y O 1ÀxÀy spectra were analyzed and the compositions for 2 and 10 nm thick Hf x Si y O 1ÀxÀy were obtained by MEIS. An interface layer was found to exist between the Si substrate and the Hf x Si y O 1ÀxÀy layer.