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Composition dependence of the Raman A1 mode and additional mode in tetragonal Cu?In?Se thin films

✍ Scribed by Xu, Chuan-Ming; Xu, Xiao-Liang; Xu, Jun; Yang, Xiao-Jie; Zuo, Jian; Kong, Ning; Huang, Wen-Hao; Liu, Hong-Tu


Book ID
115506397
Publisher
Institute of Physics
Year
2004
Tongue
English
Weight
250 KB
Volume
19
Category
Article
ISSN
0268-1242

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Influence of source composition on the p
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Using CuI1i~Se3.5 as source material epitaxial layers are obtained on (111)A-und (100)oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 720-870 K. Tho composition of the films is between CuInSe, and C~In~Se3.5. The structural properties of the films are similar