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Complementary metal-oxide semiconductor-compatible silicon carbide pressure sensors based on bulk micromachining

✍ Scribed by Wei Tang; Baixiang Zheng; Lei Liu; Zhe Chen; Haixia Zhang


Book ID
114461573
Publisher
The Institution of Engineering and Technology
Year
2011
Tongue
English
Weight
318 KB
Volume
6
Category
Article
ISSN
1750-0443

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Gas sensors for high temperature operati
✍ A. Arbab; A. Spetz; I. Lundström 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 441 KB

Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS ca