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Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

✍ Scribed by T.C. Lu; J.Y. Tsai; H.C. Kuo; S.C. Wang


Book ID
108215015
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
116 KB
Volume
107
Category
Article
ISSN
0921-5107

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## Abstract A thirty‐pair AlGaN/AlN distributed Bragg reflector (DBR) targeted at a center wavelength of 320 nm was grown on a 2‐inch sapphire substrate by metalorganic chemical vapor deposition (MOCVD). It is free of cracks in the main area of the wafer except for a ∼4 mm periphery observed under