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Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

✍ Scribed by ChaoMin Wu; JingZhi Shang; BaoPing Zhang; JiangYong Zhang; JinZhong Yu; QiMing Wang

Publisher
SP Science China Press
Year
2010
Tongue
English
Weight
652 KB
Volume
53
Category
Article
ISSN
1006-9321

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## Abstract A thirty‐pair AlGaN/AlN distributed Bragg reflector (DBR) targeted at a center wavelength of 320 nm was grown on a 2‐inch sapphire substrate by metalorganic chemical vapor deposition (MOCVD). It is free of cracks in the main area of the wafer except for a ∼4 mm periphery observed under