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Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET's

โœ Scribed by Niu, G.F.; Chen, R.M.M.; Ruan, G.


Book ID
114536633
Publisher
IEEE
Year
1996
Tongue
English
Weight
456 KB
Volume
43
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


Analytical model for threshold voltage a
โœ Abhinav Kranti; S. Haldar; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m