Comparison of ZrN and TiN formed by plasma based ion implantation & deposition

✍ Scribed by S. Heinrich; S. Schirmer; D. Hirsch; J.W. Gerlach; D. Manova; W. Assmann; S. Mändl

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 989 KB
• Volume: 202
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.08.057

✦ Synopsis

ZrN and TiN films have been deposited on Si substrates without additional heating using plasma based ion implantation & deposition (PBII&D) with pulse voltage from 0 to 5 kV. High quality columnar films have been obtained in both systems with a slight nitrogen deficiency. For ZrN, a marked reduction of the growth rate was observed when depositing with pulse bias, which was not observed for TiN, caused presumably by different partial sputter yields. A transition of the texture from ( 111) to ( 200) is again present in both systems, however with the transition occurring at a different pulse bias. Hardness values of 18-20 GPa and 22-24 GPa have been observed for TiN and ZrN, respectively.