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Comparison of OMVPE and MBE grown AlGaAsInGaAs PHEMT structures

โœ Scribed by R.T. Lareau; K.A. Jones; T. Monahan; J.R. Flemish; R.L. Pfeffer; R.E. Sherriff; C.W. Litton; R. Jones; C.E. Stutz; D.C. Look


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
556 KB
Volume
167
Category
Article
ISSN
0022-0248

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A comparison of the low frequency noise
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The influence of MBE growth conditions on the low frequency noise features of 1:8 mm thick layers of InSb is examined. Low Hooge factors down to 2 ร‚ 10 ร€ 5 , which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The tempe