๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS

โœ Scribed by M. Furuya; M. Soga; H. Takano


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
463 KB
Volume
100-101
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


GaAs delta-doped layers in Si for evalua
โœ D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 153 KB ๐Ÿ‘ 1 views

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro

Evaluation of validity of the depth-depe
โœ Jablonski, A.; Tougaard, S. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 361 KB ๐Ÿ‘ 2 views

Elastic electron scattering in XPS and AES vary considerably with depth of origin of emitted electrons. To account for this, we introduced in a recent paper a simple correction factor CF. The function CF is the ratio of emitted peak intensity from a layer of atoms located at a given depth in a solid