Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro
โฆ LIBER โฆ
Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS
โ Scribed by M. Furuya; M. Soga; H. Takano
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 463 KB
- Volume
- 100-101
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
GaAs delta-doped layers in Si for evalua
โ
D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic
๐
Article
๐
2000
๐
John Wiley and Sons
๐
English
โ 153 KB
๐ 1 views
Evaluation of validity of the depth-depe
โ
Jablonski, A.; Tougaard, S.
๐
Article
๐
1998
๐
John Wiley and Sons
๐
English
โ 361 KB
๐ 2 views
Elastic electron scattering in XPS and AES vary considerably with depth of origin of emitted electrons. To account for this, we introduced in a recent paper a simple correction factor CF. The function CF is the ratio of emitted peak intensity from a layer of atoms located at a given depth in a solid