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Comparison of hydrogen passivation of ZnSe:N using gas source and conventional molecular beam epitaxy

โœ Scribed by E. Ho; G.S. Petrich; L.A. Kolodziejski


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
396 KB
Volume
159
Category
Article
ISSN
0022-0248

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Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth