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Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

✍ Scribed by M. Katsikini; F. Pinakidou; J. Arvanitidis; E.C. Paloura; S. Ves; Ph. Komninou; Z. Bougrioua; E. Iliopoulos; T.D. Moustakas

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
421 KB
Volume
176
Category
Article
ISSN
0921-5107

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Electronic properties of Si-and Sn-doped GaN were studied by the first-principles calculations. According to the calculated density of states (DOS and PDOS), it is found that both the substitutional Si and Sn act as shallow donors in GaN. Results from charge density difference contour maps and Milli