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Comparison between surfactant-mediated Bi/Ge/Si(1 1 1) epitaxy and Ge/Si(1 1 1) epitaxy

✍ Scribed by Neelima Paul; Hidehito Asaoka; Bert Voigtländer


Book ID
108278968
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
894 KB
Volume
564
Category
Article
ISSN
0039-6028

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Solid phase epitaxy of Ge films on CaF2/
✍ E.P. Rugeramigabo; C. Deiter; J. Wollschläger 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 469 KB

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 8C. Ge films break