Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of Γ150 Β» 3 ΓC and x-ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core-level C 1s, Si 2p and Ge 3d photoelectrons were monitore
β¦ LIBER β¦
Comparative study of hydrogen adsorption on Ge(100) and Ge(111) surfaces
β Scribed by L. Surnev; M. Tikhov
- Publisher
- Elsevier Science
- Year
- 1984
- Weight
- 45 KB
- Volume
- 138
- Category
- Article
- ISSN
- 0167-2584
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Adsorption studies of digermane (Ge 2 H 6 ) and disilane (Si 2 H 6 ) on Ge(100) are reported. Temperatureprogrammed desorption (TPD) experiments suggest the existence of two hydrogen adsorption states in the submonolayer regime for both digermane and disilane. The TPD spectra observed for disilane o