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Comparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer

✍ Scribed by J. P. Xu; X. F. Zhang; C. X. Li; C. L. Chan; P. T. Lai

Book ID: 106021876
Publisher: Springer
Year: 2009
Tongue: English
Weight: 412 KB
Volume: 99
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-009-5480-z

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