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Compact quantum model for a silicon MOS tunnel diode

โœ Scribed by M.I. Vexler; N. Asli; A.F. Shulekin; B. Meinerzhagen; P. Seegebrecht

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
180 KB
Volume
59
Category
Article
ISSN
0167-9317

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Effects of the quantum inductance on the
Effects of the quantum inductance on the equivalent circuit model of a resonant tunneling diode
โœ M.G. Boudreau; H.C. Liu ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 337 KB

The effects of the quantum inductance, due to the resonance lifetime of an electron in a double barrier potential, are studied in the equivalent circuit model of a resonant tunneling diode Regions of stable and unstable circuit behavior are obtained through a small signal analysis, and phase diagram