✦ LIBER ✦

A compact quantum surface potential model for a MOSFET device

✍ Scribed by Hedley C. Morris; Henok Abebe

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 531 KB
Volume: 51
Category: Article
ISSN: 0895-7177
DOI: 10.1016/j.mcm.2009.08.023

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Compact quantum model for a silicon MOS

Compact quantum model for a silicon MOS tunnel diode

✍ M.I. Vexler; N. Asli; A.F. Shulekin; B. Meinerzhagen; P. Seegebrecht 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 180 KB

A compact model for the I–V characterist

A compact model for the I–V characteristics of an undoped double-gate MOSFET

✍ Hedley C. Morris; Alfonso Limon 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 586 KB

A 2D threshold-voltage model for small M

A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

✍ J.P. Xu; Y.P. Li; P.T. Lai; W.B. Chen; S.G. Xu; J.G. Guan 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 281 KB

A Coupled Schrödinger Drift-Diffusion Mo

A Coupled Schrödinger Drift-Diffusion Model for Quantum Semiconductor Device Simulations

✍ P. Degond; A. El Ayyadi 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S

Optical model for potential surface cros

Optical model for potential surface crossing

✍ Bruce A. Garetz; Lise Lotte Poulsen; J.I. Steinfeld 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 530 KB

Extraction of MOSFET carrier mobility ch

Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation

✍ Shiuh-Wuu Lee 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 613 KB