An empirical HBT large-signal model for
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I. Angelov; K. Choumei; A. Inoue
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Article
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2003
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John Wiley and Sons
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English
β 426 KB
A new, simple heterojunction bipolar transistor (HBT) large-signal model for use in CAD is proposed and experimentally evaluated. The important development in this model is that the main model parameters are derived directly from the measurements taken during typical operating conditions. The model