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Combined multiparametric X-ray diffraction diagnostics of microdefects in silicon crystals after irradiation by high-energy electrons

✍ Scribed by Kislovskii, E. N.; Molodkin, V. B.; Olikhovskii, S. I.; Len, E. G.; Sheludchenko, B. V.; Lizunova, S. V.; Vladimirova, T. P.; Kochelab, E. V.; Reshetnyk, O. V.; Dovganyuk, V. V.; Fodchuk, I. M.; Lytvynchuk, T. V.; Klad’ko, V. P.


Book ID
120455069
Publisher
Pleiades Publishing
Year
2013
Tongue
English
Weight
584 KB
Volume
7
Category
Article
ISSN
1027-4510

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## Abstract The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) has been performed by methods of the high‐resolution X‐ray diffraction. The concentrations and average