𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Coexistence of anion and cation vacancy defects in vacuum-annealed In2O3 thin films

✍ Scribed by C. Sudakar; A. Dixit; Sanjiv Kumar; M.B. Sahana; G. Lawes; R. Naik; V.M. Naik

Book ID
113898153
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
316 KB
Volume
62
Category
Article
ISSN
1359-6462

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Blue luminescent centers and microstruct
Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2
✍ X.Q. Wei; B.Y. Man; M. Liu; C.S. Xue; H.Z. Zhuang; C. Yang πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 485 KB

Zinc oxide (ZnO) thin films prepared on sapphire substrates by employing a pulsed laser deposition (PLD) have been annealed in vacuum, N 2 , and O 2 ambient at annealing temperature 600 1 C. X-ray diffraction (XRD) and atomic force microscopy (AFM) observation show that the annealed thin films posse

Structural and Electrical Properties of
Structural and Electrical Properties of Annealed In–Bi2S3Thin Films
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In