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Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide

✍ Scribed by K. D. Glinchuk; N. M. Litovchenko; O. N. Strilchuk

Book ID
110138892
Publisher
Springer
Year
2004
Tongue
English
Weight
51 KB
Volume
38
Category
Article
ISSN
1063-7826

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Screening effect on the binding energies
Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells
✍ H. Akbaş; Ş. Aktaş; S.E. Okan; M. Ulaş; M. Tomak πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 78 KB

The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence