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The strength of the infrared absorption from silicon donors and silicon acceptors in gallium arsenide

✍ Scribed by Laithwaite, K; Newman, R C

Book ID
127001211
Publisher
Institute of Physics
Year
1976
Tongue
English
Weight
461 KB
Volume
9
Category
Article
ISSN
0022-3719

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Nonlinear absorption in silicon and the
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## Abstract We present the first experimental results of nonlinear absorption in silicon at the mid infrared wavelengths. Nonlinear losses due to two‐photon and free‐carrier absorption that are found to degrade near infrared silicon Raman devices become negligible at photon energies less than half