๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

CMOS mobility degradation coefficients at low temperatures

โœ Scribed by Campbell, S.A.; Andersen, P.


Book ID
114454269
Publisher
The Institution of Electrical Engineers
Year
1988
Weight
322 KB
Volume
135
Category
Article
ISSN
0143-7100

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Dislocation mobility in LiF at low tempe
โœ Prof. Dr. Takayoshi Suzuki; Kazuo Nakamura ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 460 KB

Dedicated to Professor V. I. STARTSEV on the occasion of his 70th birthday The mobility of dislocations in LiF has been measured a t 4.2 and 10 K by means of an etch pit technique. The average velocity of screw dislocations is 2-5 times as large as edge dislocations. The results of the stress and t